This device is primarily a full-frame sensor with an image area of 2048 x 4104 pixels; dual connections are provided for the option of frame-transfer operation if desired. Back illumination technology, in combination with an extremely low noise amplifier, makes the device well suited to the most demanding applications, such as astronomy.
The new ‘high-rho’ technology is used to increase the thickness of the silicon to maximise the response at the infrared end of the spectral range. The device operates in the same manner as other Teledyne e2v sensors, but with additional guard-drain and back-substrate bias voltages to fully deplete the silicon.
The output amplifier is designed to give low noise at pixel rates as high as 1 MHz and the low output impedance and optional JFET buffer simplify the interface with external electronics.
The device is supplied in a package designed to facilitate the assembly of large close-butted mosaics used at cryogenic temperatures. The design of the package ensures that the device flatness is maintained at the working temperature.
